Atomic-Scale
Device Simulation Lab

Presentations

First-principles study of the origins of random telegraph noise in MoS2/hBN-based field-effect transistors
Year of Presentation 2024
Title of Presentation First-principles study of the origins of random telegraph noise in MoS2/hBN-based field-effect transistors
Author Ryong-Gyu Lee, Jiyoon Song, and Yong-Hoon Kim
Presentation in journal SISPAD 2024
date 09.25

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