Next-Generation Devices 1 페이지 | 카이스트 제1원리 나노소자 컴퓨팅 연구실

Next-Generation Semiconductor Devices

- “More Moore" & "More than Moore” electronic devices: multi-value logic, carbon/2D electronics, neuromorphic computing, etc.

- Quantum sensing & computing devices: quantum DNA sequencing, semiconductor spin qubits etc.

- Energy conversion & storage devices: solar cells, quantum dot LED, electro/photocatalysts, supercapacitor, battery, etc.

Quantum-Hybridization Negative Differential Resistance (QH-NDR)

We are actively searching for novel quantum-mechanical device principles that will realize "more-Moore" and "more-than-Moore" semiconductor devices. We proposed the quantum-hybridization negative differential resistance (QH-NDR) mechanism that can produce nonlinear device functionalities such as multi-valued logic in the extreme scaling limit. The QH-NDR emerges when quantum states initially hybridized across nanoscale interfaces are broken with an increasing applied bias voltage and is fundamentally different from the standard tunneling-based NDR mechanisms realized in the resonant tunneling diode (double-barrier tunneling) and the tunnel diode (band-to-band tunneling).

Selected Publications

● "Semimetallicity and negative differential resistance from hybrid halide perovskite nanowires"

Muhammad Ejaz Khan, Juho Lee, and Yong-Hoon Kim

Advanced Functional Materials, Vol. 29, No. 13, Art. 1807620 (2019)

Media Coverage: KAIST News (in Korean) and KAIST Times (in Korean)

● "Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control"

Juho Lee, Muhammad Ejaz Khan, and Yong-Hoon Kim

Nano Convergence, Vol. 9, Art. 25 (2022).

● "Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures"

Tae Hyung Kim, Juho Lee, Ryong-Gyu Lee, and Yong-Hoon Kim

npj Computational Materials, Vol. 8, Art. 50 (2022)

Media Coverage: KAIST Breakthroughs (Spring 2023)

Nanoscale Interfaces

The characteristic feature of extremely-scaled semiconductor devices is that the interfaces with metal electrodes and insulating substrates play a role as highly important as the semiconductor channel itself. Here, first-principles or atomistic simulations can play a vital role in elucidating the nature of various contacts and further providing design rules to engineer the interfaces. Based on MS-DFT and other in-house developed simulation methods, we are performing state-of-the-art atomistic TCAD simulations that will answer outstanding science and technology problems in developing "More Moore" and "More than Moore" devices.

Selected Publications

● "Characterizing defects inside hexagonal boron nitride using random telegraph signals in van der Waals 2D transistors"

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon Song, Jeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim*, Davood Shahrjerdi*

ACS Nano, Vol. 18, No. 42, Pages 28700-28711 (2024)

Media Coverage: ACS Nano Cover and International Media

● "Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions"

Yong-Hoon Kim*, Hu Sung Kim, Juho Lee, Makusu Tsutsui*, Tomoji Kawai

Journal of American Chemical Society, Vol. 139, No. 24, Pages 8286-8294 (2017)

Media Coverage: KAIST News (in Korean)