Atomic-Scale
Device Simulation Lab

Articles & Patents

Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistor

Year of publication 2024
Title of paper

Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistor

Author

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon SongJeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim*, and Davood Shahrjerdi*

Publication in journal ACS Nano
게재권(호) 18
페이지 28700–28711
Link 관련링크 https://pubs.acs.org/doi/10.1021/acsnano.4c06929 356회 연결
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