Atomic-Scale
Device Simulation Lab

Representative Articles

Adv. Mater. 36 (26), 2312747 (2024) [IF = 27.4]

작성자
최고관리자
작성일
24-10-01 12:57
조회수
268
관련링크

https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202312747

"High‐κ dielectric (HfO2)/2D semiconductor (HfSe2) gate stack for low‐power steep‐switching computing devices"

Taeho Kang, Joonho Park, Hanggyo Jung, Haeju Choi, Sang‐Min Lee, Nayeong Lee, Ryong‐Gyu Lee, Gahye Kim, Seung‐Hwan Kim, Hyung‐jun Kim, Cheol‐Woong Yang, Jongwook Jeon, Yong‐Hoon Kim*, and Sungjoo Lee


Advanced Materials 36 (26), 2312747 (2024)