Atomic-Scale
Device Simulation Lab

Representative Articles

ACS Nano, 18(42), 28700–28711 (2024) [IF = 15.8]

작성자
최고관리자
작성일
24-10-01 12:58
조회수
351
관련링크

https://doi.org/10.1021/acsnano.4c06929

"Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors"

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon Song, Jeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim,* and Davood Shahrjerdi*


ACS Nano, 18(42), 28700-28711 (2024)


Media Coverage

NYU Press, Fall 2024 "Researchers at NYU Tandon and KAIST develop method to 'hear' defects in promising nanomaterial"