Nanoscale Interfaces​

The characteristic feature of extremely-scaled semiconductor devices is that the interfaces with metal electrodes and insulating substrates ​play a role as highly important as the semiconductor channel itself. Here, first-principles or atomistic simulations can play a vital role in elucidating the nature of various contacts and further providing design rules to engineer ​the interfaces.  Based on MS-DFT and other in-house developed simulation methods, we are performing state-of-the-art atomistic TCAD simulations that will answer outstanding science and technology problems in developing "More Moore" and "More than Moore" devices. 

Selected Publications

● ​"Characterizing defects inside hexagonal boron nitride using random telegraph signals in van der Waals 2D transistors" 

Zhujun Huang, Ryong-Gyu Lee, Edoardo Cuniberto, Jiyoon Song, Jeongwon Lee, Abdullah Alharbi, Kim Kisslinger, Takashi Taniguchi, Kenji Watanabe, Yong-Hoon Kim*, Davood Shahrjerdi*​

ACS Nano​, Vol. 18, No. 42, Pages 28700-28711 (2024)

Media Coverage: ​ACS Nano Cover and International Media

● ​"Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions" 

Yong-Hoon Kim*, Hu Sung Kim, Juho Lee, Makusu Tsutsui*, Tomoji Kawai​​

Journal of American Chemical Society​, Vol. 139, No. 24, Pages 8286-8294 (2017)

Media Coverage: ​KAIST ​News (in Korean)​