We are actively searching for novel quantum-mechanical device principles that will realize "more-Moore" and "more-than-Moore" semiconductor​ devices. We proposed the quantum-hybridization negative differential resistance (QH-NDR) mechanism that can produce nonlinear device functionalities such as multi-valued logic in the extreme scaling limit. The QH-NDR emerges when quantum states initially hybridized across nanoscale interfaces are broken with an increasing applied bias voltage and is fundamentally different from the standard tunneling-based NDR mechanisms realized in the resonant tunneling diode (double-barrier tunneling) and the tunnel diode (band-to-band tunneling).

Selected Publications

● ​"Semimetallicity and negative differential resistance from hybrid halide perovskite nanowires"

Muhammad Ejaz Khan, Juho Lee, ​and Yong-Hoon Kim

Advanced Functional Materials, Vol. 29, No. 13, Art. 1807620 (2019)

Media Coverage: ​KAIST ​News (in Korean) and KAIST Times (in Korean)

● ​​​"Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control"

Juho Lee, Muhammad Ejaz Khan, and Yong-Hoon Kim

Nano Convergence, Vol. 9, Art. 25 (2022).

● ​"Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures"

Tae Hyung Kim, Juho Lee, Ryong-Gyu Lee, and Yong-Hoon Kim

npj Computational Materials, Vol. 8, Art. 50 (2022)

Media Coverage: ​KAIST ​Breakthroughs (Spring 2023)