Nanoscale Contacts​​​

The characteristic feature of extremely-scaled semiconductor devices is that the interfaces with metal electrodes and insulating substrates ​play a role as highly important as the semiconductor channel itself. Here, first-principles or atomistic simulations can play a vital role in elucidating the nature of various contacts and further providing design rules to engineer ​the interfaces.  

Selected Publications

● ​"Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions" 

Yong-Hoon Kim*, Hu Sung Kim, Juho Lee, Makusu Tsutsui*, Tomoji Kawai​​

Journal of American Chemical Society​, Vol. 139, No. 24, Pages 8286-8294 (2017)

Media Coverage: ​KAIST ​News (in Korean)​