Next-Generation Semiconductor Devices

​- “more Moore & more than Moore” devices: multi-value logic, carbon/2D electronics, neuromorphic computing, ​etc.

We are actively searching for novel quantum-mechanical device principles that will realize "more-Moore" and "more-than-Moore" semiconductor​ devices. We proposed the quantum-hybridization negative differential resistance (QH-NDR) mechanism that can produce nonlinear device functionalities such as multi-valued logic in the extreme scaling limit. The QH-NDR emerges when quantum states initially hybridized across nanoscale interfaces are broken with an increasing applied bias voltage and is fundamentally different from the standard tunneling-based NDR mechanisms realized in the resonant tunneling diode (double-barrier tunneling) and the tunnel diode (band-to-band tunneling).

Selected Publications

● ​"Semimetallicity and negative differential resistance from hybrid halide perovskite nanowires"

Muhammad Ejaz Khan, Juho Lee, ​and Yong-Hoon Kim

Advanced Functional Materials, Vol. 29, No. 13, Art. 1807620 (2019)

Nanoscale Contacts​​​

The characteristic feature of extremely-scaled semiconductor devices is that the interfaces with metal electrodes and insulating substrates ​play a role as highly important as the semiconductor channel itself. Here, first-principles or atomistic simulations can play a vital role in elucidating the nature of various contacts and further providing design rules to engineer ​the interfaces.  

Selected Publications

● ​"Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions" 

Yong-Hoon Kim*, Hu Sung Kim, Juho Lee, Makusu Tsutsui*, Tomoji Kawai​​

Journal of American Chemical Society​, Vol. 139, No. 24, Pages 8286-8294 (2017)