Atomic-Scale
Device Simulation Lab

Invited Talks

Invited talk: "On the atomistic origins of random telegraph noises in 2D field-effect transistors"
Year of publication 2025
Title of paper Invited talk: "On the atomistic origins of random telegraph noises in 2D field-effect transistors"
Author

Yong-Hoon Kim

Publication in journal The 33rd international Conference on Defects in Semiconductors
게재권(호) 9(18)
페이지
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