| Mechanisms of HfSe2 layer-by-layer oxidation and clean van der Waals interface formation with 2D semiconductors: First-principles molecular dynamics simulation study | |
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| Year of publication | 2025 |
| Title of paper | Mechanisms of HfSe2 layer-by-layer oxidation and clean van der Waals interface formation with 2D semiconductors: First-principles molecular dynamics simulation study |
| Author | Joonho Park and Yong-Hoon Kim |
| Publication in journal | Korean Physical Society |
| 게재권(호) | 10.22 |
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