Atomic-Scale
Device Simulation Lab

Representative Articles

Adv. Mater. 36 (26), 2312747 (2024) [IF = 27.4]

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https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202312747


High-κ dielectric (HfO2)/2D semiconductor (HfSe2) gate stack for low‐power steep‐switching computing devices


Taeho Kang, Joonho Park, Hanggyo Jung, Haeju Choi, Sang-Min Lee, Nayeong Lee, Ryong-Gyu Lee, Gahye Kim, Seung‐Hwan Kim, Hyung‐jun Kim, Cheol-Woong Yang, Jongwook Jeon, Yong-Hoon Kim*, and Sungjoo Lee*

Advanced Materials 36 (26), 2312747 (2024)