Issue 44, 2020

Valley depolarization in monolayer transition-metal dichalcogenides with zone-corner acoustic phonons

Abstract

Although single-layer transition-metal dichalcogenides with novel valley functionalities are a promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on pump–probe experiments performed for MoSe2 and WSe2 monolayers and corroborating analysis from density functional calculations, we demonstrate that coherent phonons at the K-point of the Brillouin zone can effectively mediate the valley transfer of electron carriers. In the MoSe2 monolayer case, we identify this mode as the flexural acoustic ZA(K) mode, which has broken inversion symmetry and thus can enable electron spin–flip during valley transfer. On the other hand, in the monolayer WSe2 case where spin-preserving inter-valley relaxations are preferred, coherent LA(K) phonons with even inversion symmetry are efficiently generated. These findings establish that while the specifics of inter-valley relaxations depend on the spin alignments of energy bands, the K-point phonons should be taken into account as an effective valley depolarization pathway in transition metal dichalcogenide monolayers.

Graphical abstract: Valley depolarization in monolayer transition-metal dichalcogenides with zone-corner acoustic phonons

Supplementary files

Article information

Article type
Communication
Submitted
24 Jun 2020
Accepted
22 Oct 2020
First published
22 Oct 2020

Nanoscale, 2020,12, 22487-22494

Valley depolarization in monolayer transition-metal dichalcogenides with zone-corner acoustic phonons

T. Jeong, S. Bae, S. Lee, S. Jung, Y. Kim and K. Yee, Nanoscale, 2020, 12, 22487 DOI: 10.1039/D0NR04761A

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